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Photophysics of single silicon vacancy centers in diamond: implications for single photon emission

  Articoli su Riviste JCR/ISI  (anno 2012)

Autori:  Neu E., Agio M., Becher Ch

Affiliazione Autori:  Universität des Saarlandes, Fachrichtung 7.2 (Experimentalphysik), 66123 Saarbrücken, Germany; National Institute of Optics (INO-CNR) and European Laboratory for Nonlinear Spectroscopy (LENS), 50019 Sesto Fiorentino, Italy

Riassunto:  Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers. (C) 2012 Optical Society of America

Rivista/Giornale:  OPTICS EXPRESS
Volume n.:  20 (18)      Pagine da: 19956  a: 19971
Ulteriori informazioni:  We thank M. Fischer, S. Gsell and M. Schreck (University of Augsburg) for supplying the CVD diamond samples. The project was financially supported by the Bundesministerium fur Bildung und Forschung within the projects EphQuaM (contract 01BL0903) and QuOReP (contract 01BQ1011). M. Agio wishes to thank F. Koenderink (AMOLF) and he acknowledges financial support from the EU-STREP project \"QIBEC\".
DOI: 10.1364/OE.20.019956

*Impact Factor della Rivista: (2012) 3.546   *Citazioni: 59
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  19/05/2019

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