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Influence of the substrate platform on the opto-electronic properties of multi-layer organic light-emitting field-effect transistors

  Articoli su Riviste JCR/ISI  (anno 2011)

Autori:  Generali G., Dinelli F., Capelli R., Toffanin S., Muccini M

Affiliazione Autori:  Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), via P. Gobetti 101, I-40129 Bologna, Italy; Consiglio Nazionale delle Ricerche (CNR), INO U.O.S. ‘A. Gozzini’ Area della Ricerca di Pisa - S. Cataldo, via Moruzzi 1, I-56124 Pisa, Italy

Riassunto:  In this paper, we present a study of the effects of the influence of the substrate platform on the properties of a three-layer vertical hetero-junction made of thin films of alpha, omega-diperfluorohexyl-4T (DHF4T), a blend of tris(8-hydroxyquinoline) aluminium (Alq3) and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) and alpha, omega-dihexyl-quaterthiophene (DH4T). The hetero-junction represents the active component of an organic light-emitting transistor (OLET). The substrate platforms investigated in this study are glass/indium-tin-oxide/poly(methyl-methacrylate) (PMMA) and Si++/silicon oxide (SiO2)/PMMA. The first platform is almost completely transparent to light and therefore is very promising for use in OLET applications. The second one has been chosen for comparison as it employs standard microelectronic materials, i.e. Si++/SiO2. We show how different gate materials and structure can affect the relevant field-effect electrical characteristics, such as the charge mobility and threshold voltage. By means of an atomic force microscopy analysis, a systematic study has been made in order to correlate the morphology of the active layers with the electrical properties of the devices.

Rivista/Giornale:  JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume n.:  44 (22)      Pagine da: 224018  a: 224018
DOI: 10.1088/0022-3727/44/22/224018

*Impact Factor della Rivista: (2011) 2.544   *Citazioni: 6
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  19/05/2019

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