INO
CNR
vai_a_storia   vai_a_organizzazione   vai_a_sedi   vai_a_personale   Area Riservata
    English English Version  
 
 

Light transport through disordered layers of dense gallium arsenide submicron particles

  Articoli su Riviste JCR/ISI  (anno 2012)

Autori:  van der Beek T., Barthelemy P., Johnson PM., Wiersma D., Lagendijk A

Affiliazione Autori:  FOM Inst Atom & Mol Phys AMOLF, NL-1098 XG Amste, Netherlands; Delft Univ Technol, Fac Sci Appl, NL-2628 CJ Delft, Netherlands; European Lab Nonlinear Spect LENS, Florence, Italy; CNR INO, Florence, Italy

Riassunto:  We present a study of optical transport properties of powder layers with submicrometer, strongly scattering gallium arsenide (GaAs) particles. Uniform, thin samples with well controlled thicknesses were created through the use of varying grinding times, sedimentation fractionation, annealing, and a new sedimentation technique. These fabrication parameters were optimized to produce maximum scattering and minimum absorption. The physical properties were characterized using scanning electron microscopy (SEM) and x-ray diffraction. The optical transport mean-free path, absorption length, and the diffusion constant were determined for each sample using both continuous wave and time-resolved methods. The samples scatter strongly in the near infrared region. Total reflection and transmission measurements show that all of these samples have high absorption. X-ray diffraction results suggest that the source of this absorption is grinding induced strain and/or defects in the crystal structure. For all the different grinded GaAs powder samples that we investigated, the absorption length was less than ten micrometers.

Rivista/Giornale:  PHYSICAL REVIEW B
Volume n.:  85 (11)      Pagine da: 115401  a: 115401
Ulteriori informazioni:  We thank the University of Amsterdam x-ray crystallography department for putting their facilities at our disposal, and University of Twente Mesa+ for measuring the x-ray SEM. We thank Nir Rotenberg and Jacopo Bertolotti for their contributions. This work is part of the research program of the \"Stichting voor Fundamenteel Onderzoek der Materie\" (FOM), which is financially supported by the Dutch organization for scientific research (NWO) and made possible by the Financial support by ENI-Donegani, Italy, and the European Network of Excellence on Nanophotonics for Energy Efficiency.
DOI: 10.1103/PhysRevB.85.115401

*Impact Factor della Rivista: (2012) 3.767   *Citazioni: 34
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  19/05/2019

Riferimenti visionabili in IsiWeb of Knowledge: (solo per sottoscrittori)
Per visualizzare la scheda dell'articolo su IsiWeb: Clicca qui
Per visualizzare la scheda delle Citazioni dell'articolo su IsiWeb: Clicca qui

INO © Istituto Nazionale di Ottica - Largo Fermi 6, 50125 Firenze | Tel. 05523081 Fax 0552337755 - P.IVA 02118311006     P.E.C.    Info