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Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

  Articoli su Riviste JCR/ISI  (anno 2013)

Autori:  Gatto Monticone D., Quercioli F., Mercatelli R., Soria S., Borini S., Poli T., Vannoni M., Vittone E., Olivero P

Affiliazione Autori:  Physics Department, University of Torino, Torino, Italy; Nanostructured Interfaces and Surfaces” (NIS) Centre of Excellence, University of Torino, Torino, Italy; Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino, Italy; Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Ottica, Firenze, Italy; Consiglio Nazionale delle Ricerche (CNR), Istituto di Fisica Applicata “Nello Carrara,” Firenze, Italy [6] Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), sez. Torino, Italy; Thermodynamics Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Torino, Italy;Chemistry Department, University of Torino, Italy

Riassunto:  We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2-MeV H+-implanted type Ib diamond samples by means of a time-correlated single-photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e., laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e., laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasiexponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.

Rivista/Giornale:  PHYSICAL REVIEW B
Volume n.:  88 (15)      Pagine da: 155201  a: 155201
Ulteriori informazioni:  We thank J. Meijer for the 10-MeV N implantations performed at the \"heavy ion leg\" beam of the 4 MV Tandem accelerator of the RUBION laboratories (Ruhr Universitat Bochum). This work is supported by the following projects and grants, which are gratefully acknowledged: FIRB \"Future in Research 2010\" Project (CUP code: D11J11000450001) funded by the Italian Ministry for Teaching, University and Research (MIUR); \"Dia. Fab.\" experiment at the INFNLegnaro National Laboratories; one-month DAAD 2011 type-1B grant \"Ion implantation in diamond for applications in photonics\" (application number: A/11/78148) funded by the German Academic Exchange Service; \"A. Di. N-Tech.\" project (CUP code: D15E13000130003) funded by University of Torino and Compagnia di San Paolo in the framework of the \"Progetti di ricerca di Ateneo 2012\" scheme; University of TorinoCompagnia di San Paolo Project No. ORTO11RRT5, 2011, Linea 1A.
DOI: 10.1103/PhysRevB.88.155201

*Impact Factor della Rivista: (2013) 3.664   *Citazioni: 19
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  19/05/2019

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