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Simultaneous Electrochemical Reduction and De lamination of Graphene Oxide Films

  Articoli su Riviste JCR/ISI  (anno 2015)

Autori:  Wang X., Kholmanov I., Ruoff R

Affiliazione Autori:  Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, United States; CNR-INO Brescia, Sensor Lab, Via Branze 45, 25123 Brescia, Italy; Center for Multidimensional Carbon Materials, Institute of Basic Sciences Center, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Republic of Korea

Riassunto:  Here we report an electrochemical method to simultaneously reduce and delaminate graphene oxide (G-0) thin films deposited on metal (Al and Au) substrates. During the electrochemical reaction, interface charge transfer between the G-0 thin film and the electrode surface was found to be important in eliminating oxygen-containing groups, yielding highly reduced graphene oxide (rG-0). In the meantime, hydrogen bubbles were electrochemically generated at the rG-0 film/electrode interface, propagating the film delamination. Unlike other metal-based G-0 reduction methods, the metal used here was either not etched at all (for Au) or etched a small amount (for Al), thus making it possible to reuse the substrate and lower production costs. The delaminated rG-0 film exhibits a thickness-dependent degree of reduction: greater reduction is achieved in thinner films. The thin rG-0 films having an optical transmittance of 90% (lambda=550 nm) had a sheet resistance of 6390 +/- 447 Omega/square (ohms per square). rG-0-based stretchable transparent conducting films were also demonstrated.

Rivista/Giornale:  ACS NANO
Volume n.:  9 (9)      Pagine da: 8737  a: 8743
Ulteriori informazioni:  We thank Prof. C. Grant Willson and Dr. Longjun Li for valuable discussions and manuscript revision. We thank Feng Lu for providing the Au electrode. We appreciate funding support from the National Science Foundation, under Project No. 1206986; NSF-NASCENT Engineering Research Center (Cooperative Agreement No. EEC-1160494); and the South West Academy of Nanoelectronics (SWAN 2.0, Grant 2013-NE-2400), a Semiconductor Research Corporation program.
DOI: 10.1021/acsnano.5b03814

*Impact Factor della Rivista: (2015) 13.334   *Citazioni: 31
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  19/05/2019

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