INO
CNR
vai_a_storia   vai_a_organizzazione   vai_a_sedi   vai_a_personale   Area Riservata
    English English Version  
 
 

Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics

  Articoli su Riviste JCR/ISI  (anno 2018)

Autori:  Serra E.; Morana B.; Borrielli A.; Marin F.; Pandraud G.; Pontin A.; Prodi G.A.; Sarro P.M.; Bonaldi

Affiliazione Autori:  TIFPA, Ist Nazl Fis Nucl, I-38123 Trento, Italy; Delft Univ Technol, ECTM, EKL, NL-2628 Delft, Netherlands; Inst Mat Elect & Magnetism, Nanosci Trento FBK Div, I-38123 Trento, Italy; Univ Firenze, Dipartimento Fis & Astron, I-50121 Florence, Italy; Univ Firenze, LENS, I-50121 Florence, Italy; INFN, Sez Firenze, I-50019 Sesto Fiorentino, FI, Italy; CNR, INO, I-50125 Florence, Italy; Univ Trento, Dipartimento Fis, I-38123 Trento, Italy.

Riassunto:  Optomechanical SiN nano-oscillators in high-finesse Fabry-Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q similar or equal to 10(7) and a Q-frequency product in excess of 6.2 x 10(12) Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.

Rivista/Giornale:  JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume n.:  27 (6)      Pagine da: 1193  a: 1203
DOI: 10.1109/JMEMS.2018.2876593

   *Citazioni: 1
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  19/05/2019

Riferimenti visionabili in IsiWeb of Knowledge: (solo per sottoscrittori)
Per visualizzare la scheda dell'articolo su IsiWeb: Clicca qui
Per visualizzare la scheda delle Citazioni dell'articolo su IsiWeb: Clicca qui

INO © Istituto Nazionale di Ottica - Largo Fermi 6, 50125 Firenze | Tel. 05523081 Fax 0552337755 - P.IVA 02118311006     P.E.C.    Info