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Torus Breakdown in a Uni Junction Memristor

  Articoli su Riviste JCR/ISI  (anno 2018)

Autori:  Cinoux JM., Meucci R., Euzzor S., di Garbo A

Affiliazione Autori:  [Cinoux, Jean-Marc] UMR CNRS 7020, Lab Informat & Syst, CS 60584, F-83041 Toulon 9, France. [Meucci, Riccardo; Euzzor, Stefano] CNR, Ist Nazl Ott, Largo E Fermi 6, I-50125 Florence, Italy. [di Garbo, Angelo] CNR, Ist Biofis, Via G Moruzzi 1, I-56124 Pisa, Italy.

Riassunto:  Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) v(m)-i(m) characteristic for modeling the UJT's DC current-voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.

Rivista/Giornale:  INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS
Volume n.:  28 (10)      Pagine da: 1850128-1  a: 1850128-11
DOI: 10.1142/S0218127418501286


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