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Modulation response, mixed-mode oscillations and chaotic spiking in quantum dot light emitting diode

  Articoli su Riviste JCR/ISI  (anno 2015)

Autori:  Al Husseini H.B., Al Naimee K.A., Al Khursan A.H., Abdalah S.F., Khedir A.H., Meucci R., Arecchi F

Affiliazione Autori:  Deptartment of Physics, College of Science, University of Baghdad, Al Jadiriyah, Baghdad, Iraq; Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq; Istituto Nazionale di Ottica - CNR, Largo E. Fermi 6, Firenze, 50125, Italy

Riassunto:  In this work quantum dot light emitting diode (QD-LED) was modeled in a dimensionless rate equations system where it is not done earlier. The model was examined first under bias current without any external perturbation where it exhibits chaotic phenomena since the model has multi-degrees of freedom. Then, it is perturbed by both small signal and direct current modulations (DCM), separately. The system exhibits mixed-mode oscillations (MMOs) under DCM. This behavior was reasoned to continuous states of two dimensional wetting layer (WL) which works as a reservoir to quantum dot (QD) states. QD capture was the dominant rate controlling the dynamic behavior in QD-LED. The nonlinear dynamic behavior of our model is compared very well to the experimental observations in the QD-LED.

Volume n.:  78      Pagine da: 229  a: 237
DOI: 10.1016/j.chaos.2015.07.033

*Impact Factor della Rivista: (2015) 1.611
data tratti da "WEB OF SCIENCE" (marchio registrato di Thomson Reuters) ed aggiornati a:  21/07/2019

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